Journal
APPLIED PHYSICS EXPRESS
Volume 10, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.10.046602
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- New Energy and Industrial Technology Development Organization (NEDO)
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We demonstrate practical great advantages of the photoluminescence (PL) measurement at liquid N temperature after electron irradiation for quantifying low-level C in Si compared with the measurement at liquid He temperature. The broadening of the C-related C-and G-lines enabled us to detect the lines rapidly with high sensitivity by using the optimized low-dispersion spectroscopic apparatus. Positive correlations were found between their intensity ratios to the band-edge emission and the C concentration estimated by PL measurement at 4.2 K. The disappearance of dopant-impurity-related lines simplifies the recombination process, suggesting the improvement of quantification accuracy. (C) 2017 The Japan Society of Applied Physics
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