Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 17, Pages 14998-15004Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b03597
Keywords
organic light-emitting diodes; graphene; boron doping polycyclic aromatic hydrocarbons; chemical vapor deposition; flexibility
Funding
- Taiwan Ministry of Science and Technology [MOST 105-2633-M-007003, MOST 103-2628-M-007-004-MY3, MOST 103-2119-M007-008-MY3]
- Instrumentation Center of NTHU
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The hole-injection barrier between the anode and the hole-injection layer (HIL) is of critical importance to determine the device performance of organic light-emitting diodes (OLEDs). Here, we report on a record-high external quantum efficiency (EQE) (24.6% in green phosphorescence) of OLEDs fabricated on both rigid and flexible substrates, with the performance enhanced by the use of nearly defect-free and high-mobility boron-doped graphene as an effective anode and hexaazatriphenylene hexacarbonitrile as a new type of HIL. This new structure outperforms the existing graphene-based OLEDs, in which MoO3, AuCl3, or bis-(trifluoromethanesulfonyl)amide are typically used as a doping source for the p-type graphene. The improvement of the OLED performance is attributed mainly to the appreciable increase of the hole conductivity in the nearly defect-free boron-doped monolayer graphene, along with the high work function achieved by the use of a newly developed hydrocarbon precursor containing boron in the graphene growth by chemical vapor deposition
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