High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

We report on Sn-doped beta-Ga2O3 MOSFETs grown by molecular beam epitaxy with as-grown carrier concentrations from 0.7 x 10(18) to 1.6 x 10(18) cm(-3) and a fixed channel thickness of 200 nm. A pulsed current density of >450 mA/mm was achieved on the sample with the lowest sheet resistance and a gate length of 2 mu m. Our results are explained using a simple analytical model with a measured gate voltage correction factor based on interface charges that accurately predict the electrical performance for all doping variations. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.