Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4978855
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Funding
- Japan Science and Technology Agency (JST)
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High-power 265 nm deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) with large-area AlN nanophotonic light-extraction structures that were fabricated by a nanoimprint lithography process are presented. Each DUV-LED has a large active area (mesa size of similar to 0.35mm(2)) and a uniform current spreading design that allows high injection current operation. We have shown that these DUV-LEDs with their large-area nanoimprinted AlN nanophotonic structures exhibit wider near-field emitting areas, stronger far-field extracted light intensities, and an approximately 20-fold increase in output power when compared with a conventional flat-surface DUV-LED. A large-area nanoimprinted single-chip DUV-LED operating in the UV-C wavelength regime has demonstrated a record continuous-wave output power in excess of 150 mW for an injection current of 850mA at a peak emission wavelength of 265 nm.(C) 2017 Author(s).
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