Journal
APPLIED SURFACE SCIENCE
Volume 407, Issue -, Pages 255-259Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2017.02.128
Keywords
AlN; Photoemission; Electron affinity; Surface states
Categories
Funding
- Council of Scientific and Industrial Research, India under CSIR project [PSC-0109]
- DST (GoI)
- SIMCO Global Tech. System Ltd.
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The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6-1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2-3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films. (C) 2017 Elsevier By, All rights reserved.
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