4.8 Article

Electronic Properties of Graphene-PtSe2 Contacts

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 18, Pages 15809-15813

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b00012

Keywords

graphene; platinum diselenide; contact; band bending; heterostructure

Funding

  1. King Abdullah University of Science and Technology (KAUST)
  2. Qatar National Research Fund (Qatar Foundation) [NPRP 7-665-1-125]

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In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.

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