Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 18, Pages 15583-15591Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b02101
Keywords
ReS2; substitutional doping; DFT calculations; homojunction; p-n diode
Funding
- National Natural Science Foundation of China [51572057]
- Shandong Provincial Key Lab of Special Welding Technology, Harbin Institute of Technology at Weihai
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Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS2) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS2 by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Modoped ReS2 field effect transistors, in agreement with density functional theory calculations. The p-n diode device based on a doped ReS2 and ReS2 homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at V-d = -2/+2 V. The successful synthesis of p-type ReS2 in this study could largely promote its application in novel electronic and optoelectronic devices.
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