Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4980847
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Using laser terahertz emission microscopy, we measured laser-excited terahertz (THz) emission from silicon wafers with silicon-oxide passivation layers, revealing a strong correlation between the THz waveform and the surface potential. The surface potential was electrically tuned by a semitransparent top electrode disc and evaluated by measuring capacitance-voltage characteristics. The waveform changed with external bias and inverted near the flatband voltage, and changes appeared in the peak amplitude were similar to the capacitance-voltage characteristics. These results indicate that by analyzing the waveform of laser-excited THz emission generated by laser terahertz emission microscopy, we could quantitatively measure and map the internal field of surface band bending in semiconductors. Published by AIP Publishing.
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