Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 19, Pages 16327-16334Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b03527
Keywords
resistive memory; titanium dioxide; oxygen vacancies; resistive switching mode; single-crystal
Funding
- Canada Research Chair Program
- Fonds de Recherche du Quebec - Nature et Technologies (FRQNT)
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Epitaxial TiO2 thin filins were grown by radio frequency magnetron sputtering on conductive Nb-SrTiO3 substrates. X-ray photoelectron specttoscopy reveals that the oxygen vacancies inside the TiO2 films can be dramatically reduced by postannealing treatment under an oxygen atmosphere. The decreasing concentration of oxygen vacancies modifies the resistive switching (RS) mechanism from a valence change mode to a electrochemical metallization mode, resulting in a high switching ratio (>= 10(5)), a small electronic leakage current in the high-resistance (>= 10(9) Omega) state, and a highly controlled quantized conductance (QC) in the low -resistance state. These results between different RS mechanisms as-well as the QC for multilevel data storage application. allow for understanding the relationship between different RS mechanisms as well as the QC for multilevel data storage application.
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