Journal
AIP ADVANCES
Volume 7, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4993677
Keywords
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Funding
- Natural Science Foundation of China [11474201, 61234005, 11674225]
- China Postdoctoral Science Foundation [15Z102060052, 16Z102060054]
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We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si: H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si: H (p-a-Si: H) layer, and (iv) the doping concentration of the p-a-Si: H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si: H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably. (C) 2017 Author(s).
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