Journal
AIP ADVANCES
Volume 7, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4996172
Keywords
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Funding
- Department of the Defense, Defense Threat Reduction Agency [HDTRA1-17-1-011]
- Office of Basic Energy Sciences, U.S. Department of Energy
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2015R1D1A1A01058663]
- Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2015M3A7B7045185]
- New Energy and Industrial Technology Development Organization (NEDO), Japan
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AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at >= 300 degrees C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Omega-mm and 2.82 x 10(-5) Omega-cm(2) were achieved after a relatively low temperature 400 degrees C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface. (C) 2017 Author(s).
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