Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 16, Pages 14006-14012Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b00082
Keywords
solar cell; Cu(In,Ga)Se-2; laser annealing; ink-printing; flexible
Funding
- Ministry of Science and Technology [105-2112-M-009-011, 105-2811-M-009-092, 106-2917-1-564-024, 104-2628-M-007-004-MY3, 104-2221-E-007-048-MY3, 105-2633-M-007-003, 104-2622-M-007-002-CC2]
- MOE ATU program at NCTU [106W964]
- National Tsing Hua University [106N509CE1, 105A0088J4]
- Department of Industrial Technology, Ministry of Economic Affairs, Taiwan
Ask authors/readers for more resources
Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu(In,Ga)Se-2 (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of In-se, V-Se, and In-cu. Consequently, the shunt leakage current and recombination centers were enhancement in photovoltaic conversion efficiency. both greatly decreased, resulting in a near 20%
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available