Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4984951
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Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [NRF-2016R1A2B4011706, 2016R1D1A1B03932295, 2014R1A2A2A01007718, 2016R1C1B1014103]
- National Research Foundation of Korea [2016R1A2B4011706, 2017R1D1A1B03030964, 2014R1A2A2A01007718, 2016R1D1A1B03932295, 2016R1C1B1014103] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the room temperature ferromagnetic and ambipolar behaviours of MoS2 thin flakes doped with MnO2 by electrochemical adsorption. The MoS2 thin film was determined to be multilayered over four layers from Raman analysis. The Mn-oxide doped MoS2 has a ferromagnetic hysteresis at room temperature and showed a weak remnant magnetization, 0.02 emu/g. From the gate dependent transfer characteristics of the MoS2 field effect transistor, it appeared that the Mn-oxide doped MoS2 has ambipolar behaviours with field effect mobilities of about 3.7 and 16.3 cm(2)V(-1)s(-1), respectively, for electrons and holes. Published by AIP Publishing.
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