Journal
APPLIED SURFACE SCIENCE
Volume 405, Issue -, Pages 344-349Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2017.02.007
Keywords
Indium tin oxide; Ar plasma; Sol-gel process; Thermal diffusion; Sheet resistance
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Funding
- National Research Foundation of Korea (NRF) grant - Korea government (MSIP) [NRF2016R1E1 A2A01939795]
- LG Display academic industrial cooperation program
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Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film. (C) 2017 Elsevier B.V. All rights reserved.
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