Pressure-Dependent Growth of Wafer-Scale Few-layer h-BN by Metal Organic Chemical Vapor Deposition

A few-layer hexagonal boron nitride (h-BN) films with wafer-scale thickness uniformity were grown by using. a multiwafer metal organic chemical vapor deposition (MOCVD) system at relatively low temperature of 1050 degrees C under various reactor pressures. The effect of the reactor pressure on the structural properties of the h-BN films was systematically investigated by various spectroscopic and, Microscopic analysis. tools including near-edge X-ray absorption-fine structure spectroscopy and transmission electron microscopy. We found that the defects in the MOCVD-grown h-BN films such as nitrogen vacancies and grain boundaries were strongly affected by the reactor pressure, which was elucidated by pressure dependent change of Gibbs free energy for the nuclei formation and reaction rates. Based on our experimental observations, the growth strategies were discussed: for realization of high-quality; multiwafer-scale uniformity h-BN films grown by MOCVD at temperature of 1050 degrees C.