Journal
APPLIED PHYSICS EXPRESS
Volume 10, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.10.061002
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Funding
- Strategic Innovation Promotion (SIP) Program
- NEDO
- Five-Star Alliance
- JSPS KAKENHI, Japan [JP16H06424, JP16H06427, JP26706003]
- Grants-in-Aid for Scientific Research [16H06427] Funding Source: KAKEN
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The photoluminescences of ion-implanted (I/I) and epitaxial Mg-doped GaN (GaN:Mg) are compared. The intensities and lifetimes of the near-band-edge and ultraviolet luminescences associated with a MgGa acceptor of I/I GaN: Mg were significantly lower and shorter than those of the epilayers, respectively. Simultaneously, the green luminescence (GL) became dominant. These emissions were quenched far below room temperature. The results indicate the generation of point defects common to GL and nonradiative recombination centers (NRCs) by I/I. Taking the results of positron annihilation measurement into account, N vacancies are the prime candidate to emit GL and create NRCs with Ga vacancies, (V-Ga)(m)(V-N)(n), as well as to inhibit p-type conductivity. (C) 2017 The Japan Society of Applied Physics
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