Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling

Extreme ultraviolet (EUV) lithography is expected to succeed in 193-nm immersion multi-patterning technology for -sub-10-nm critical layer patterning. In order to be successful, EUV lithography has to demonstrate that it can satisfy the industry requirements in the following critical areas: power, dose stability, etendue, spectral content, and lifetime. Currently, development of second-generation laser-produced plasma (LPP) light sources for the ASML's NXE: 3300B EUV scanner is complete, and first units are installed and operational at chipmaker customers. We describe different aspects and performance characteristics of the sources, dose -stability results, power scaling, and availability data for EUV sources and also report new development results.