Industrial growth and characterization of Si-doped GaAs crystal by a novel multi-crucible Bridgman method

In this wok, a novel multi-crucible Bridgman method is developed to produce the O 2 inch Si-doped GaAs crystals. Five placements are designed in the furnace means five ingots could be produced at the same time. Twinning and high dislocation density are the main growth defects that often take place in the crystals. After the solid-liquid interface and crystal cooling rate are optimized, the Si-doped GaAs crystals with favorable single crystalline yield are successfully obtained. The average etching pits density (EPD) of optimized GaAs crystals is <1500/cm(2). Full width at half maximum (FWHM) are tested all less than 60 that indicates GaAs crystals have high crystalline quality. The carrier concentration near the bottom and tail parts of ingots is in range of (4.5-5.9)x10(17) /cm(3) and (1.2-2.1)x10(18) /cm(3) due to segregation of Si element in GaAs crystals. Accordingly, the mobility is decreased from 2128-2651 cm(2)/v.s to 1581-1854 cm(2)/v.s. The result proves such multi-crucible Bridgman method is a feasible way for industrial growth of Si-doped GaAs crystals for opto-electronic application.