Journal
2D MATERIALS
Volume 4, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa5920
Keywords
two-dimensional materials; molybdenum disulfide (MoS2); strain engineering; metal-semiconductor junction; Schottky barrier
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Funding
- BBVA Foundation: 'I Convocatoria de Ayudas Fundacion BBVA a Investigadores, Innovadores y Creadores Culturales'
- MINECO [RYC-2014-01406]
- MICINN [MAT2014-58399-JIN]
- MICINN/MINECO [MAT2014-57915-R, FIS2013-47328-C02-1]
- Comunidad Autonoma de Madrid [S2013/MIT-3007]
- Generalitat Valenciana [PROMETEO/2012/011]
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We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer MoS2 crystals deposited onto a conductive indium tin oxide (ITO) substrate while measuring simultaneously the I-V characteristics of the vertical tip/MoS2/ITO structures. The structures show rectifying I-V characteristics, with rectification ratios strongly dependent on the applied load. To understand these results, we compare the experimental I-Vs with a double Schottky barrier model, which is in good agreement with our experimental results and allows us to extract quantitative information about the electronic properties of the tip/MoS2/ITO structures and their dependence on the applied load. Finally, we test the stability of the studied structures using them as mechanically tunable current rectifiers.
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