Related references
Note: Only part of the references are listed.Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
Gwan-Hyoung Lee et al.
ACS NANO (2015)
Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates
Roland Yingjie Tay et al.
APPLIED PHYSICS LETTERS (2015)
Large-Area, Transfer-Free, Oxide-Assisted Synthesis of Hexagonal Boron Nitride Films and Their Heterostructures with MoS2 and WS2
Sanjay Behura et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2015)
Nucleation Control for Large, Single Crystalline Domains of Mono layer Hexagonal Boron Nitride via Si-Doped Fe Catalysts
Sabina Caneva et al.
NANO LETTERS (2015)
Controlled Growth of Few-Layer Hexagonal Boron Nitride on Copper Foils Using Ion Beam Sputtering Deposition
Haolin Wang et al.
SMALL (2015)
Large-Area Monolayer Hexagonal Boron Nitride on Pt Foil
Ji-Hoon Park et al.
ACS NANO (2014)
Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors
Lifeng Wang et al.
ADVANCED MATERIALS (2014)
Atomic layer deposition of a MoS2 film
Lee Kheng Tan et al.
NANOSCALE (2014)
Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
Jeong-Gyu Song et al.
ACS NANO (2013)
Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
Ki Kang Kim et al.
ACS NANO (2012)
High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics
Chun-Chieh Lu et al.
ACS NANO (2012)
Electronic compressibility of layer-polarized bilayer graphene
A. F. Young et al.
PHYSICAL REVIEW B (2012)
Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition
Yumeng Shi et al.
NANO LETTERS (2010)
Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions
Myrsini Lafkioti et al.
NANO LETTERS (2010)
Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
Li Song et al.
NANO LETTERS (2010)
Boron nitride substrates for high-quality graphene electronics
C. R. Dean et al.
NATURE NANOTECHNOLOGY (2010)
Adsorbates on graphene: Impurity states and electron scattering
T. O. Wehling et al.
CHEMICAL PHYSICS LETTERS (2009)
Effects of Surface Chemistry on Structure and Thermodynamics of Water Layers at Solid-Vapor Interfaces
David B. Asay et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2009)
Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
Damon B. Farmer et al.
NANO LETTERS (2009)
First-principles studies of water adsorption on graphene: The role of the substrate
Tim O. Wehling et al.
APPLIED PHYSICS LETTERS (2008)
Intrinsic and extrinsic performance limits of graphene devices on SiO2
Jian-Hao Chen et al.
NATURE NANOTECHNOLOGY (2008)
Substrate-limited electron dynamics in graphene
S. Fratini et al.
PHYSICAL REVIEW B (2008)
Substrate-induced band gap in graphene on hexagonal boron nitride:: Ab initio density functional calculations
Gianluca Giovannetti et al.
PHYSICAL REVIEW B (2007)
Evolution of the adsorbed water layer structure on silicon oxide at room temperature
DB Asay et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2005)
Laser-assisted atomic layer deposition of boron nitride thin films
J Olander et al.
CHEMICAL VAPOR DEPOSITION (2005)
Atomic layer deposition of boron nitride using sequential exposures of BCl3 and NH3
JD Ferguson et al.
THIN SOLID FILMS (2002)
Atomic layer deposition of BN thin films
B Marlid et al.
THIN SOLID FILMS (2002)