Journal
SCIENTIFIC REPORTS
Volume 7, Issue -, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41598-017-03266-y
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Funding
- National Natural Science Foundation [51502346, 51672220]
- 111 Program of MOE [B08040]
- National Defence Science Foundation of China [32102060303]
- National Basic Research Program of China [2015Cb057400]
- National Key Research and Development Plan [2016YFB1102600]
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Bismuth titanate Bi4Ti3O12 (BiT), was one of the most promising lead-free high-temperature piezoelectric materials, due to high Curie temperature (675 degrees C) and large spontaneous polarization (50 mu C/cm(2)); however, extensive studies had revealed that high leakage conductivity interferes with the poling process, hindering its practical applications. In this paper, an electrically insulating property was achieved by a low level Nb donor substitution to suppress a high level of holes associated with high oxygen vacancy concentration. Bi4Ti2.97Nb0.03O12 ceramic showed significant enhancements of electrical resistivity by more than three order of magnitude and activity energy with value >1.2 eV, which are significant for piezoelectric applications of BiT-based materials. However, pure and A(2)O(3)-excess (A = Bi, La and Nd; 3 at %) BiT ceramics, were mixed hole and oxygen ion conductors. Schottky barriers were both formed at grain boundary region and the sample-electrode interface, because of the existence of semiconducting bulk. Interestingly, the electron conduction could be suppressed in N-2, as a consequence, they became oxide ion conductors with conductivity of about 4 x 10(-4) S cm(-1) at 600 degrees C.
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