Journal
2D MATERIALS
Volume 4, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa61e1
Keywords
tungsten ditelluride; WTe2; transition metal dichalcogenide; van der Waals epitaxy; molecular beam epitaxy
Categories
Funding
- Center for Low Energy Systems Technology (LEAST)
- STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program - MARCO
- DARPA
- SWAN Center, a SRC center - Nanoelectronics Research Initiative
- NIST
- NSF [1407765]
- Texas Higher Education Coordinating Board's Norman Hackerman Advanced Research Program
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1407765] Funding Source: National Science Foundation
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The growth of WTe2 thin films by molecular beam epitaxy is demonstrated for the first time on a variety of 2D substrates including MoS2, Bi2Te3, and graphite. We demonstrate that beam interruption of the metal source enables the growth of crystalline WTe2 films in the distorted octahedral (1T') phase. As a result of the van der Waals nature of this material, a sharp interface between the WTe2 thin film and the substrate is shown with no evidence of misfit dislocations. In addition, the buckled structure expected for the semi-metallic 1T' phase is observed with transmission electron microscopy. Raman spectroscopy further confirms the growth of the 1T' phase and x-ray photoelectron spectroscopy shows the films to be stoichiometric and semi-metallic as expected.
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