Controlled synthesis of 2D transition metal dichalcogenides: from vertical to planar MoS2

Among post-graphene two dimensional (2D) materials, transition metal dichalcogenides (TMDs, such as MoS2) have attracted significant attention due to their superior properties for potential electronic, optoelectronic and energy applications. Scalable and controllable powder vapor transport (PVT) methods have been developed to synthesize 2D MoS2 with controllable morphologies (i.e. horizontal and vertical), yet the growth mechanism for the transition from horizontal to vertical orientation is not clearly understood. Here, we combined experimental and numerical modeling studies to investigate the key growth parameters that govern the morphology of 2D materials. The transition from vertical to horizontal growth is achieved by controlling the magnitude and distribution of the precursor concentration by placing the substrate at different orientations and locations relative to the source. We have also shown that the density of as-grown nanostructures can be controlled by the local precursor-containing gas flow rate. This study demonstrates the possibility for engineering the morphology of 2D materials by controlling the concentration of precursors and flow profiles, and provides a new path for controllable growth of 2D TMDs for various applications.