Journal
PHYSICAL REVIEW B
Volume 95, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.95.201202
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Funding
- network GaNeX [ANR-11-LABX-0014]
- Investissements d'Avenir program
- National Science Foundation [1538127]
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1538127] Funding Source: National Science Foundation
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The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic line has a Lorentzian profile resulting from motional narrowing, with a width increasing linearly with the lattice temperature T. In contrast, when the exciton-lattice coupling is strong, the line shape is Gaussian with a width increasing sublinearly with the lattice temperature, proportional to root T. While the former case is commonly reported in the literature, here the latter is reported for hexagonal boron nitride. Thus the theoretical predictions of Toyozawa [Prog. Theor. Phys. 20, 53 (1958)] are supported by demonstrating that the exciton-phonon interaction is in the strong-coupling regime in this van der Waals crystal.
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