Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 18, Pages 15592-15598Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b02838
Keywords
2D MoTe2 nanosheet; IGZO thin film; PN junction diode; complementary inverter; hybrid device
Funding
- NRF (NRL program) [2014R1A2A1A01004815]
- Creative Materials Discovery Program through NRF - Ministry of Science, ICT and Future Planning [2015M3D1A1068061]
- Global Leading Technology Program - Ministry of Trade, Industry and Energy, Republic of Korea [10042433-2012-11]
- Brain Korea 21 plus Program
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We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of similar to 3 x 10(4). Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet oxide film hybrid CMOS inverter exhibits voltage gains as high as similar to 40 at 5 V, low power consumption less than around a few nW at 1 V, and similar to 200 mu s switching dynamics.
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