Journal
RSC ADVANCES
Volume 7, Issue 42, Pages 26322-26327Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ra03433d
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Funding
- Nanyang Technological University
- National Key Research and Development Program of China [2016YFB0401702]
- Shenzhen Peacock Team Project [KQTD2016030111203005]
- Shenzhen Innovation Project [JCYJ20160301113356947, JCYJ20160301113537474, JCYJ20150630145302223]
- Foshan Innovation Project [2014IT100072]
- Southern University of Science and Technology
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We report the advantageous properties of inorganic copper(I) thiocyanate (CuSCN) as a solution-processable hole injection material in quantum dot-based light-emitting diodes (QLEDs). CuSCN, with its high work function, it decreases the turn-on voltage (Vth) by 0.8 volt to 3.4 V as compared with devices based on the most-widely used poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) (Vth = 4.2 V). As a transparent, highly stable and low cost commercial material, CuSCN acting as the hole injection layer (HIL) gives the QLED better Vth, and comparable performance to PEDOT: PSS- based QLED for other parameters including maximum luminance and external quantum efficiency. The decreased Vth can improve the power efficiency and is a necessary step in meeting market demand. The successful demonstration of the solution-processed inorganic HIL using simple and low temperature processing routes provide guidelines and prospects for the development of reliable all-inorganic and tandem QLEDs and possible commercial applications at a large scale.
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