Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 35, Issue 3, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4979347
Keywords
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Funding
- Delaware Space Grant College and Fellowship Program (NASA) [NNX15AI19H]
- National Science Foundation [DMR-1505574, DMR-1105137]
- U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0008166]
- U.S. Department of Energy (DOE) [DE-SC0008166] Funding Source: U.S. Department of Energy (DOE)
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1505574] Funding Source: National Science Foundation
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The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for semiconductor composites with a wide range of potential optical, electrical, and thermal properties, making them useful for applications in thermoelectrics, tunnel junctions, phototconductive switches, and as contact layers. The similarities in crystal structures and lattice constants allow them to be epitaxially incorporated into III-V semiconductors with low defect densities and high overall film quality. A variety of growth techniques for these composites with be discussed, along with their growth mechanisms and current applications, with a focus on more recent developments. Results obtained from molecular beam epitaxy film growth will be highlighted, although other growth techniques will be mentioned. Optical and electronic characterization along with the microscopy analysis of these composites is presented to demonstrate influence of nanoinclusion composition and morphology on the resulting properties of the composite material. (C) 2017 Author(s).
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