Journal
ADVANCED MATERIALS
Volume 29, Issue 22, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201606175
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Funding
- National Basic Research Program of China [2013CB933001]
- MOST [2016YFA0200200]
- Natural Science Foundation of China [51433005, 21274074]
- National Natural Science Foundation of China [U1401244, 21374025]
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Phototransistors with a structure of a nitrogen-doped graphene quantum dots (NGQDs)-perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution-processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 x 104 A W-1), and rapid response to light on-off (approximate to 10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air.
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