3.8 Article

Optoelectronic Properties of Heterostructures The most recent developments based on graphene and transition-metal dichalcogenides

Journal

IEEE NANOTECHNOLOGY MAGAZINE
Volume 11, Issue 2, Pages 18-32

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/MNANO.2017.2676185

Keywords

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Funding

  1. U.S. Army Research Office through MURI Grant [W911NF-11-1-0362]
  2. DOEBES [DE-SC0002613]
  3. Office of Naval Research DURIP [11997003]
  4. NSF [NSF-DMR-1157490]
  5. state of Florida

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