Journal
RSC ADVANCES
Volume 7, Issue 29, Pages 17841-17847Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra28230j
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Funding
- Global Leading Technology Program - Ministry of Trade, Industry and Energy, Republic of Korea [10042419]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2012R1A6A1029029]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10042419] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A hybrid gate dielectric material for flexible OTFT is developed by using core-shell nanoparticles (SiO2@PSRXL) where the core and the shell consist of silica nanoparticles and polysiloxane resin, respectively. Since polysiloxane resin contains both thermal-and photo-crosslinkable functional groups, densely-crosslinked thin gate dielectric films can be easily prepared on various substrates by conventional solution casting followed by dual crosslinking. SiO2@PSRXL films exhibit high thermal stability (weight loss at 300 degrees C is smaller than 3 wt%). The dielectric films made of SiO2@PSRXL show an exceptionally low leakage current and no breakdown voltage up to 4.3 MV cm(-1), which are comparable to those of silica dielectrics prepared by CVD. OTFT devices based on dibenzothiopheno[6,5-b: 6',5'-f] thieno[3,2-b] thiophene (DTBTT) as a semiconductor and SiO2@PSRXL as a gate dielectric exhibit good hole mobility (2.5 cm(2) V-1 s(-1)) and I-on/I-off ratio (10(6)).
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