Journal
RSC ADVANCES
Volume 7, Issue 14, Pages 8388-8393Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra27847g
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Funding
- Natural Science Foundation of China [51472199, 11534015, 51602244]
- Natural Science Foundation of Shaanxi Province [2015JM5196]
- National 111 Project of China [B14040]
- 973 Program [2015CB057402]
- Fundamental Research Funds for the Central Universities
- International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies
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High-k dielectric HfO2 thin films with a predominant monoclinic phase were prepared by atomic layer deposition (ALD). The annealed HfO2 films exhibited a large dielectric constant, of up to epsilon(r) = 26 with a high breakdown field of over 4000 kV cm(-1). The best performance with a maximum recoverable energy density of 21.3 J cm(-3) and energy efficiency of 75% was obtained with the 63 nm HfO2 films. In addition, a well-defined temperature dependence of the energy storage properties from room temperature to 150 degrees C was demonstrated, indicating a stable energy density variation between 11.0 and 13.0 J cm(-3) with a high energy efficiency of about 80%. These achievements provide a platform for synthesizing high-k dielectric thin films with enhanced energy densities and efficiencies.
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