4.6 Article

Current-voltage characteristics of Weyl semimetal semiconducting devices, Veselago lenses, and hyperbolic Dirac phase

Journal

PHYSICAL REVIEW B
Volume 95, Issue 21, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.95.214103

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The current-voltage characteristics of a new range of devices built aroundWeyl semimetals has been predicted using the Landauer formalism. The potential step and barrier have been reconsidered for three-dimensionalWeyl semimetals, with analogies to the two-dimensional material graphene and to optics. With the use of our results we also show how a Veselago lens can be made from Weyl semimetals, e. g., from NbAs and NbP. Such a lens may have many practical applications and can be used as a probing tip in a scanning tunneling microscope (STM). The ballistic character of Weyl fermion transport inside the semimetal tip, combined with the ideal focusing of the Weyl fermions (by Veselago lens) on the surface of the tip may create a very narrow electron beam from the tip to the surface of the studied material. With a Weyl semimetal probing tip the resolution of the present STMs can be improved significantly, and one may image not only individual atoms but also individual electron orbitals or chemical bonding and therewith to resolve the long-term issue of chemical and hydrogen bond formation. We show that applying a pressure to the Weyl semimental, having no center of spatial inversion, one may model matter at extreme conditions, such as those arising in the vicinity of a black hole. As the materials Cd3As2 and Na3Bi show an asymmetry in their Dirac cones, a scaling factor was used to model this asymmetry. The scaling factor created additional regions of no propagation and condensed the appearance of resonances. We argue that under an external pressure there may arise a topological phase transition in Weyl semimetals, where the electron transport changes character and becomes anisotropic. There a hyperbolic Dirac phase occurs where there is a strong light absorption and photocurrent generation.

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