Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

Heterogeneous integration of InP devices to Si substrates by adhesive- less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1: 2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement