Journal
OPTICAL MATERIALS EXPRESS
Volume 7, Issue 3, Pages 904-912Publisher
OPTICAL SOC AMER
DOI: 10.1364/OME.7.000904
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Funding
- National Key Research and Development Program of China [2016YFB0400100]
- National Natural Science Foundation of China [61225019, 61376060, 61428401, 61521004]
- Science Challenge Project [JCKY2016212A503]
- NSAF [U1630109]
- CAEP Microsystem and THz Science and Technology Foundation [CAEPMT201507]
- Open Fund of the State Key Laboratory on Integrated Optoelectronics
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It remains a challenge to characterize the doping type in nanowires (NWs). We report in this paper a novel way to probe the doping type in GaN NWs by photoassisted kelvin probe force microscopy (KPFM), as a proper example showing that this approach is straight forward, effective and practical. Through illumination with super-bandgap light, photo-generated electrons in the n-region are swept away from the surface due to the electric field in the space-charge region, thus the holes move to the surface; while in contrast, electrons in the p-region will move to the surface. The fact that the quasi-Fermi level moves upwards in n-type while downwards in p-type identifies the doping type of GaN NWs, and is clearly revealed by the contact potential difference detected by photoassisted KPFM. (C) 2017 Optical Society of America
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