Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4990390
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Funding
- EU project Graphene Flagship [696656]
- DFG [BE 2441/9-1]
- Elemental Strategy Initiative
- JSPS KAKENHI [JP26248061, JP15K21722, JP25106006]
- Grants-in-Aid for Scientific Research [25107004] Funding Source: KAKEN
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We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices, we extract charge carrier mobilities up to 180 000 cm(2)/(Vs) at 2K and up to 40 000 cm(2)/(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ratio of more than 10 000 and a band gap opening with values of up to 15meV for a displacement field of 0.2 V/nm in such CVD grown BLG. Published by AIP Publishing.
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