Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4989680
Keywords
-
Categories
Funding
- National Basic Research Program of China [2015CB921502]
- National Science Foundation of China [11574027, 51325101, 51371024, 51471029]
- Beijing Municipal Science and Technology Program [Z161100002116013]
- Beijing Municipal Innovation Environment and Platform Construction Project [Z161100005016095]
- [NCET130665]
Ask authors/readers for more resources
The spin Hall magnetoresistance (SMR) effect is studied in a magnetoelectric Cr2O3/heavy-metal W heterostructure. The Cr2O3 film is confirmed as the alpha-phase, and its Neel temperature is determined. A clear SMR behavior is observed at the interface of Cr2O3/W. A nearly 0.1% SMR ratio is achieved under a magnetic field of 9 T, which is larger than the reported value in the SrMnO3/Pt structure. A systematic study on the variations of SMR as functions of the magnetic field and its angle is performed. Our results indicate that the antiferromagnetic magnetoelectric Cr2O3/W structure has a promising prospect application in future spintronic devices. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
