Journal
ADVANCED MATERIALS
Volume 29, Issue 24, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201700503
Keywords
alloyed contacts; black phosphorus carbide; carbon doping; field-effect transistors; mobility
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Funding
- National University of Singapore Faculty Research Committee Grants [R-263-000-B21-133, R-263-000-B21-731]
- AstarSTAR Science and Engineering ResearchCouncil Grants [152-70-00013, 152-70-00017]
- National Research Foundation, Prime Minister's Office, Singapore under its medium sized centre program
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Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (approximate to 10(5) cm(2) V-1 s(-1)) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm(2) V-1 s(-1) at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 mu m is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment.
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