4.6 Article

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

Journal

APPLIED PHYSICS LETTERS
Volume 110, Issue 23, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4984296

Keywords

-

Funding

  1. Indo-German Science and Technology Council (IGSTC)
  2. DST, New Delhi

Ask authors/readers for more resources

We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition. Published by AIP Publishing.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available