Initiated Chemical Vapor Deposition of Polymer Films at High Process Temperature for the Fabrication of Organic/Inorganic Multilayer Thin Film Encapsulation

For the fabrication of thin film encapsulation (TFE), sequential deposition of organic and inorganic layers is inevitable. A single-chamber system of initiated chemical vapor deposition (iCVD) and atomic layer deposition (ALD) is reported previously. Here, the substrate temperature (T-s) of the iCVD is aligned with that of ALD to facilitate the transition of the deposition mode by removing delays caused by repeated heating/cooling of the substrate. While increasing the T-s of iCVD from 40 to 90 degrees C, the process pressure is optimized so that the properties of the organic film are unchanged from that deposited with 40 degrees C. The T-s alignment significantly reduced the time delay during transition of the deposition mode, and the fabrication of the TFE is expedited.