Journal
CHINESE PHYSICS B
Volume 26, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/26/7/077802
Keywords
AlGaN; time-resolved photoluminescence; localized excitons
Categories
Funding
- National Key Research and Development Program of China [2016YFB0400101]
- Beijing Science and Technology Project, China [Z151100003315024]
Ask authors/readers for more resources
AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers' localization and delocalization in the AlGaN alloy.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available