4.4 Article

Interfacial void segregation of Cl in Cu-Sn micro-connects

Journal

ELECTRONIC MATERIALS LETTERS
Volume 13, Issue 4, Pages 307-312

Publisher

KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-017-6304-5

Keywords

interfacial voids; impurities; scanning transmission electron microscopy; energy dispersive X-ray; ab initio calculation

Funding

  1. EU Eniac
  2. Finnish Funding Agency for Technology and Innovation
  3. Okmetic
  4. Murata Electronics Oy [2013-2-621176]
  5. National Natural Science Foundation of China [51661003]

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A scanning transmission electron microscopy and an energy dispersive X-ray analysis of one non-annealed and one annealed sample (423 K for 4 hours) was performed. The results showed small and large voids appearing within the non-annealed and annealed samples respectively. In addition, chlorine segregated from the bulk into the voids. Ab initio calculations determined the formation energies for dilute solutions of chlorine and vacancies in Cu, Cu3Sn and Cu6Sn5. Results suggest that dilute solutions energetically favor vacancies, indicating a low chlorine solubility and a driving force for segregation.

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