Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4986188
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- Research Grant Council of the Hong Kong Special Administrative Region Government [CityU139313, CityU11205514]
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We report a strategy to realize and facilitate the photocarrier transport from mercury selenium colloidal quantum dots (HgSe CQDs) into silicon with the assistance of twisted graphene. A nanocomposite material consisting of HgSe CQDs and twisted graphene has been synthesized. By bringing the nanocomposites into contact with silicon, a HgSe CQD-twisted graphene nanocomposite/silicon junction was fabricated and demonstrated photoresponses in the long-wave infrared range. In the nanocomposites, the surface of twisted graphene was decorated with HgSe CQDs. Benefiting from the twisted structure in the nanocomposites, the active sensing area and light-matter interaction length are greatly increased. Driven by the interfacial built-in potential, photocarriers directly transfer from HgSe CQDs into the twist graphene, which serves as a fast carrier transport pathway to silicon, leading to high photocarrier collection efficiency. Compared with vertically stacked HgSe CQD film/flat graphene, the application of HgSe CQD-twisted graphene nanocomposites avoids photocarriers transporting via the hopping mechanism and over 2700% enhancement ratio of spectral responsivity was achieved, reaching 31.5mA/W@ 9 mu m. The interfacial energy band diagram was deduced for a better understanding of the photocarrier transfer process occurring at the interface between HgSe colloidal quantum dots, twist graphene, and silicon. Published by AIP Publishing.
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