Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4986439
Keywords
-
Categories
Funding
- National Science Foundation Nanosystems Engineering Research Center on Nanomanufacturing Systems for Mobile Computing and Mobile Energy Technologies (NASCENT)-NSF EEC [1160494]
- ECCS Division of the National Science Foundation [ECCS-1407932]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1407932] Funding Source: National Science Foundation
Ask authors/readers for more resources
Charge transport in polymer field-effect transistors is hugely affected by the polarization effects, which can be originated from polar molecules in the gate dielectric and ambient air. In this letter, we investigate the polarization induced trapping enhancement by dipoles in the gate dielectric layer and ambient air at the same time through the experiment with varying conditions of surface dielectric and polar analytes in the atmosphere. We demonstrate the result from diketopyrrolopyrrole based co-polymer transistors with high mobility. Polarization effects from dipoles in the atmosphere affect mostly the shallower trap states and are relatively less severe when the interface of the gate dielectric is very polar. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available