Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 23, Pages 20179-20187Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b02645
Keywords
monolcoier doping; germanitn; antimony; shalloiv junction; dopant activation
Funding
- transversal CEA project Zero POVA
- European Community's Seventh Framework Program (Nano embrace Project) [PITN-GA-2012-316751]
- French National Research Agency [ANR-13-B509-0020, ANR-11-EQPX-0015]
- Agence Nationale de la Recherche (ANR) [ANR-11-EQPX-0015] Funding Source: Agence Nationale de la Recherche (ANR)
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Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 1020 cm(-3). Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.
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