Related references
Note: Only part of the references are listed.Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
Hong-Yu Chen et al.
JOURNAL OF ELECTROCERAMICS (2017)
Role of Al doping in the filament disruption in HfO2 resistance switches
Stefano Brivio et al.
NANOTECHNOLOGY (2017)
Analog HfO2-RRAM Switches for Neural Networks
E. Covi et al.
NONVOLATILE MEMORIES 5 (2017)
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
S. Brivio et al.
APPLIED PHYSICS LETTERS (2016)
HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
Boubacar Traore et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices
Simone Balatti et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
A memristor random circuit breaker model accounting for stimulus thermal accumulation
Jinling Xing et al.
IEICE ELECTRONICS EXPRESS (2016)
Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier
Jaesung Park et al.
AIP ADVANCES (2016)
Analog Memristive Synapse in Spiking Networks Implementing Unsupervised Learning
Erika Covi et al.
FRONTIERS IN NEUROSCIENCE (2016)
Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly
Jacopo Frascaroli et al.
ACS NANO (2015)
Physics of the Switching Kinetics in Resistive Memories
Stephan Menzel et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices
S. Brivio et al.
APPLIED PHYSICS LETTERS (2015)
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Andrea Padovani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
Daniele Garbin et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design
Pai-Yu Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Effect of Al doping on the retention behavior of memories HfO2 resistive switching
Jacopo Frascaroli et al.
MICROELECTRONIC ENGINEERING (2015)
Causes and consequences of the stochastic aspect of filamentary RRAM
R. Degraeve et al.
MICROELECTRONIC ENGINEERING (2015)
Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity
Sungho Kim et al.
NANO LETTERS (2015)
Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
NATURE (2015)
Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide
Bin Gao et al.
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL (2015)
Conductive-bridging random access memory: challenges and opportunity for 3D architecture
Debanjan Jana et al.
NANOSCALE RESEARCH LETTERS (2015)
Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide
Bin Gao et al.
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL (2015)
Gradual set dynamics in HfO2-based memristor driven by sub-threshold voltage pulses
S. Brivio et al.
2015 INTERNATIONAL CONFERENCE ON MEMRISTIVE SYSTEMS (MEMRISYS) (2015)
Dual random circuit breaker network model with equivalent thermal circuit network
Kwanyong Kim et al.
APPLIED PHYSICS EXPRESS (2014)
Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches
Stefano Ambrogio et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
Formation and disruption of conductive filaments in a HfO2/TiN structure
S. Brivio et al.
NANOTECHNOLOGY (2014)
A compound memristive synapse model for statistical learning through STDP in spiking neural networks
Johannes Bill et al.
FRONTIERS IN NEUROSCIENCE (2014)
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations
Peng Huang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Integration of nanoscale memristor synapses in neuromorphic computing architectures
Giacomo Indiveri et al.
NANOTECHNOLOGY (2013)
A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
Shimeng Yu et al.
APPLIED PHYSICS LETTERS (2012)
Low-power resistive switching in Au/NiO/Au nanowire arrays
S. Brivio et al.
APPLIED PHYSICS LETTERS (2012)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Emerging memories: resistive switching mechanisms and current status
Doo Seok Jeong et al.
REPORTS ON PROGRESS IN PHYSICS (2012)
Resistance switching memories are memristors
Leon Chua
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2011)
Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching
S. B. Lee et al.
APPLIED PHYSICS LETTERS (2011)
Crossbar Logic Using Bipolar and Complementary Resistive Switches
R. Rosezin et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
Daniele Ielmini
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Study of defects in an electroresistive Au/La2/3Sr1/3MnO3/SrTiO3(001) heterostructure by positron annihilation
R. Ferragut et al.
JOURNAL OF APPLIED PHYSICS (2011)
Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker et al.
JOURNAL OF APPLIED PHYSICS (2011)
Ionic doping effect in ZrO2 resistive switching memory
Haowei Zhang et al.
APPLIED PHYSICS LETTERS (2010)
'Memristive' switches enable 'stateful' logic operations via material implication
Julien Borghetti et al.
NATURE (2010)
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
Ugo Russo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels
Chunli Liu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2009)
Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
S. H. Chang et al.
PHYSICAL REVIEW LETTERS (2009)
Random circuit breaker network model for unipolar resistance switching
Seung Chul Chae et al.
ADVANCED MATERIALS (2008)
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition
S. Spiga et al.
MICROELECTRONIC ENGINEERING (2008)
Robust algorithm for random resistor networks using hierarchical domain structure
HA Knudsen et al.
JOURNAL OF COMPUTATIONAL PHYSICS (2006)
Share Paper
