4.7 Article

Electrochemical synthesis of nanostructured Se-doped SnS: Effect of Se-dopant on surface characterizations

Journal

APPLIED SURFACE SCIENCE
Volume 410, Issue -, Pages 186-195

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2017.03.062

Keywords

SnS; SnS1-xSex thin films; Optical properties; X-ray diffraction; Electrodeposition; Nanostructures

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SnS1-xSex nanostructures with different Se-dopant concentrations were deposited on fluorine doped tin oxide (FTO) substrate through cathodic electrodeposition technique. The pH, temperature, applied potential (E), and deposition time remained were 2.1, 60 degrees C, -1V, and 30 min, respectively. SnS1-xSex nanostructures were characterized using X-ray diffraction (XRD), field emission scanning electron microcopy (FESEM), energy dispersive X-ray spectroscopy (EDX), room temperature photoluminescence (PL), and UV-vis spectroscopy. The XRD patterns revealed that the SnS1-xSex nanostructures were polycrystalline with orthorhombic structure. FESEM showed various kinds of morphologies in SnS1-xSex nanostructures due to Se-doping. PL and UV-vis spectroscopy were used to evaluate the optical properties of SnS1-xSex thin films. The PL spectra of SnS1-xSex nanostructures displayed four emission peaks, those are a blue, a green, an orange, and a red emission. UV-vis spectra showed that the optical band gap energy (E-g) of SnS1-xSex nanostructures varied between 1.22-1.65 eV, due to Se-doping. (C) 2017 Elsevier B.V. All rights reserved.

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