4.4 Article

Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCPMT.2017.2655939

Keywords

High frequency modeling; integrated capacitor; measurements; power distribution network (PDN); silicon interposer

Funding

  1. ARC6, Region Auvergne-Rhone-Alpes, France

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The feasibility of cointegration of new capacitors, named through silicon capacitors (TSCs) with through silicon vias in silicon interposers has recently been demonstrated. Two architectures of TSC are extensively investigated in this paper: axial TSC whose electrodes are connected on either sides of the silicon interposer and radial TSC with electrodes both connected to the metal layers of the back end of line. A general modeling method based on distributed cell segmentation is proposed for both architectures. Validation is performed by measurements from 1 kHz to 40 GHz (above the resonance frequency of the components). A comparative study between radial and axial architectures is performed, leading to the prediction of the performances of those new components. Finally, design rules are established for future integration for power delivery networks decoupling applications.

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