Journal
DIAMOND AND RELATED MATERIALS
Volume 75, Issue -, Pages 34-38Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2016.12.016
Keywords
-
Ask authors/readers for more resources
A detailed study of diamond growth on diamond microneedles was conducted using micro-Raman spectroscopy of the microneedle and coalescence regions to approach the production of freestanding diamond substrate by heteroepitaxy with the microneedle growth method. The high-density non-diamond-phase carbon is contaminated in the initial stage of overgrowth of diamond on diamond microneedles, but this completely disappears through the quick recovery of the crystallinity of the overgrown diamond layers during the coalescence with the lateral direction growth. We also point out the possibility that a strong driving force is applied to the dislocations generated at the regrowth point and at the coalescence front to enhance the mutual annihilation of dislocations. In addition, we reveal that the stress state changes from compressive stress in the initial diamond layers to a nearly stress-free state in the bulk layers on the microneedles through a momentary tensile stress state at the regrowth point at the tip of the microneedle. Overall results indicate the strong feasibility of producing freestanding, stress-free, single-crystal diamond substrate by heteroepitaxy. (C) 2016 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available