Efficient All-Solution Processed Quantum Dot Light Emitting Diodes Based on Inkjet Printing Technique

Quantum dot light emitting diodes (QLEDs) are increasingly attractive owing to their compatibility with the inkjet printing process and potential application in low-cost large-area full-color pixelated display. The strategy for controlling the morphology of the quantum dot layer is definitely critical for realizing all-solution processed QLEDs with high performance, which certainly requires in-depth thinking regarding the design of ink composition and their optimization in the printing process. Herein, by carefully controlling the quantum dot ink composition and physico-5 chemical properties, we demonstrate that the viscosity, contact angle, and the three-phase contact line moving would affect the final morphology of the quantum dot film formed by inkjet printing. We achieved coffee ring-free and low-roughness quantum dot film, and all-solution processed QLEDs with normal structure were fabricated for the first time. The devices have a low turn on voltage of 2.0 V, a luminance of 12100 cd/m(2) at the voltage of 12 V, and a maximum current efficiency of 4.44 cd/A at the luminance of 1974 cd/m(2), which is the best result to date for inkjet-printed red QLEDs. The results will pave the way for future application of inkjet printing in solution processed pixelated QLED display.