Vertical solar blind Schottky photodiode based on Homoepitaxial Ga2O3 thin film

High quality germanium doped beta-Ga2O3 epitaxial film was grown by PMBE technique and fabricated into a vertical type Schottky photodiode with a Pt/nGa(2)O(3)/n(+)Ga(2)O(3)(010) structure. The photodiode exhibited excellent rectifying characteristics with a turn on voltage similar to 1V and near zero bias leakage current similar to 100 fA. The photoresponse measurement showed a true solar blind sensitivity with cutoff wavelength similar to 260 nm and an out of band rejection ratio of similar to 10(4). A maximum responsivity of 0.09 A/W at 230 nm was measured at zero bias, corresponding to an external quantum efficiency of similar to 52 %. The time response of the photovoltaic diode is in the millisecond range and has no long-time decay component which is very common in the MSM photoconductive wide bandgap devices. The photodiode performance remains stable up to 300 degrees C, suggesting its potential use for high temperature applications.